Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes-Reference-Cited by-同舟云学术

Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes

Published:2011-04-01 Issue:2 Volume:10 Page:023014
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hotta Shoji

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

2. 32 nm logic patterning options with immersion lithography

3. Metrology challenges for advanced lithography techniques

4. Metrology challenges of double exposure and double patterning

5. T. Koike, T. Ikeda, H. Abe, and F. Komatsu , “An investigation of SEM overlay metrology,”Microprocesses and Nanotechnology Conference, Digest of Papers, Yokohama, Japan, (1999).

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1. Review of scanning electron microscope-based overlay measurement beyond 3-nm node device;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-06-13

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3. Model-based correction for local stress-induced overlay errors;Optical Microlithography XXXI;2018-03-20

4. Overlay accuracy investigation for advanced memory device;SPIE Proceedings;2015-03-19

5. Exact and reliable overlay metrology in nanoscale semiconductor devices using an image processing method;Journal of Micro/Nanolithography, MEMS, and MOEMS;2014-10-10