Study of EUV reticle storage effects through exposure on EBL2 and NXE-Reference-Cited by-同舟云学术

Study of EUV reticle storage effects through exposure on EBL2 and NXE

Published:2020-11-04 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet Lithography 2020
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Author:

Jonckheere Rik,Wu Chien-Ching,de Rooij-Lohmann Veronique,Elstgeest Dorus,Lensen Henk,Hoenicke Philipp,Kolbe Michael,Soltwisch Victor,Zech Claudia,Scholze Frank,Aubert Remko,Nair Vineet Vijayakrishnan,Hendrickx Eric

Publisher

SPIE

Reference11 articles.

1. EUV mask defectivity – A process of increasing control towards HVM;Jonckheere,2017

2. Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool

3. Understanding EUV-induced plasma and application to particle contamination control in EUV scanners

4. Carbon contamination topography analysis of EUV masks

5. Lifetime test on EUV photomask with EBL2

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1. Proposal of cap layer design combined with absorber for EUV mask;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests;Journal of Vacuum Science & Technology B;2023-01-01

3. First results of EUV-scanner compatibility tests performed on novel 'high-NA' reticle absorber materials;International Conference on Extreme Ultraviolet Lithography 2021;2021-10-12

4. Picometer sensitivity metrology for EUV absorber phase;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-08-12