Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2735945
Reference16 articles.
1. Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition
2. Effect of NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO2
3. Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
4. Direct tunneling leakage current and scalability of alternative gate dielectrics
5. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
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