Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference58 articles.
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4. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors;Mikolajick;MRS Bull.,2018
5. A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective;Park;J. Appl. Phys.,2020
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1. Optimization of the 4 nm-Thick Hf1–xZrxO2 Film with Low Operating Voltage and High Endurance for Ferroelectric Random Access Memory;ACS Applied Electronic Materials;2024-09-12
2. Phase transition kinetics and sublayer optimization of HfO2/ZrO2 superlattice ferroelectric thin films;Applied Physics Letters;2024-08-19
3. Optimal Process Design for Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance;Electronics;2024-07-23
4. Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films;Applied Physics Letters;2024-06-03
5. Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition;IEEE Transactions on Electron Devices;2024-04
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