Reaction mechanism and film properties of the atomic layer deposition of ZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor-Reference-Cited by-同舟云学术

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Reaction mechanism and film properties of the atomic layer deposition of ZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor

Published:2023-07 Issue: Volume:624 Page:157104
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Choi Ae Rim,Seo Seunggi,Kim Seiyon,Kim Dohee,Ryu Seung-Wook,Lee Woo-Jae,Oh Il-Kwon^ORCID

Funder

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

SK Hynix

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference45 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices;Kingon;Nature,2000

2. Nanomaterials in transistors: from high-performance to thin-film applications;Franklin;Science,2015

3. Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT;Taouririt;Appl. Nano.,2018

4. Thermal decomposition in situ monitoring system of the gas phase cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe2)3) based on FT-IR and QMS for atomic layer deposition;An;Nanoscale Res. Lett.,2020

5. Growth, dielectric properties, and memory device applications of ZrO2 thin films;Panda;Thin Solid Films,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition;Surfaces and Interfaces;2024-03

2. Novel halogenated cyclopentadienyl hafnium precursor for atomic layer deposition of high-performance HfO₂ thin film;RSC Advances;2024

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