Author:
Delabie Annelies,Caymax Matty,Brijs Bert,Brunco David P.,Conard Thierry,Sleeckx Erik,Van Elshocht Sven,Ragnarsson Lars-Åke,De Gendt Stefan,Heyns Marc M.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference32 articles.
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4. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
5. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
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