Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels

Published:2019-12-18 Issue:10 Volume:16 Page:671-685
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Delabie Annelies,Alian A.,Bellenger Florence,Brammertz Guy,Brunco David P.,Caymax Matty,Conard Thierry,Franquet A.,Houssa Michel,Sioncke Sonja,Van Elshocht S.,Van Hemmen J. L.,Keuning W.,Kessels W. M.,Avanasiev Valery,Stesmans Andre,Heyns Marc M.,Meuris Marc

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2986824/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process;ACS Applied Electronic Materials;2019-02-19

2. Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks;Journal of Applied Physics;2018-04-07

3. Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation;IEEE Journal of the Electron Devices Society;2018

4. Hf-based high-k dielectrics for p-Ge MOS gate stacks;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05

5. Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks;Microelectronic Engineering;2011-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP