MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics-Reference-Cited by-同舟云学术

MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics

Published:2017-07-28 Issue:16 Volume:29 Page:6772-6780
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Zhang Haodong¹²^ORCID,Arutchelvan Goutham²³,Meersschaut Johan²,Gaur Abhinav²³,Conard Thierry²,Bender Hugo²,Lin Dennis²,Asselberghs Inge²,Heyns Marc²³,Radu Iuliana²,Vandervorst Wilfried²⁴,Delabie Annelies¹²^ORCID

Affiliation:

1. Department of Chemistry, KU Leuven, 3001 Leuven, Belgium

2. Imec, Kapeldreef 75, 3001 Leuven, Belgium

3. Department of Materials Engineering, KU Leuven, 3001 Leuven, Belgium

4. Department of Physics and Astronomy, KU Leuven, 3001 Leuven, Belgium

Funder

Imec

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b01695

Reference49 articles.

1. Monolithic 3D CMOS Using Layered Semiconductors

2. Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

3. Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

4. Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

5. Modulating Carrier Density and Transport Properties of MoS2 by Organic Molecular Doping and Defect Engineering

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