Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor-Reference-Cited by-同舟云学术

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Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor

Published:2004-12-13 Issue:24 Volume:85 Page:5953-5955
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cho Moonju,Jeong Doo Seok,Park Jaehoo,Park Hong Bae,Lee Suk Woo,Park Tae Joo,Hwang Cheol Seong,Jang Gi Hoon,Jeong Jaehack

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1829773

Reference13 articles.

1. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

2. High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant

3. Electrical and Physical Properties of HfO[sub 2] Deposited via ALD Using Hf(OtBu)[sub 4] and Ozone atop Al[sub 2]O[sub 3]

4. Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

5. Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

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1. Hybrid reactant-enabled atomic layer deposition of HfO2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode;Materials Today Communications;2024-08

2. Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources;Solid-State Electronics;2024-06

3. An experimental comparison of interface trap density in hafnium oxide-based FeFETs;Memories - Materials, Devices, Circuits and Systems;2023-12

4. Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability;Surfaces and Interfaces;2023-11

5. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition;ACS Applied Electronic Materials;2023-09-07

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