High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1637128
Reference13 articles.
1. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics
2. Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
3. Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications
4. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
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