Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1435411
Reference8 articles.
1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
2. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
3. Band offsets of wide-band-gap oxides and implications for future electronic devices
4. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
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