Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications-Reference-Cited by-同舟云学术

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Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications

Published:2003-07 Issue:1 Volume:94 Page:551-557
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hu Hang,Zhu Chunxiang,Lu Y. F.,Wu Y. H.,Liew T.,Li M. F.,Cho B. J.,Choi W. K.,Yakovlev N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1579550

Reference21 articles.

1. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

2. High-κ gate dielectrics: Current status and materials properties considerations

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