Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources-Reference-Cited by-同舟云学术

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Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources

Published:2024-06 Issue: Volume:216 Page:108911
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Seungbin,Jung Yong Chan,Park Hye Ryeon,Park Seongbin,Kang Jongmug,Jeong Juntak,Choi Yeseo,Kim Jin-Hyun,Mohan Jaidah,Kim Harrison Sejoon,Kim Jiyoung,Kim Si Joon

Funder

Semiconductor Research Corp

Korea Institute for Advancement of Technology

KEIT

Publisher

Elsevier BV

Reference18 articles.

1. Ferroelectric thin Hf0.5Zr0.5O2 films: a review of recent advances;Kim;JOM,2019

2. Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices;Park;J Mater Chem C,2020

3. Low-thermal-budget fluorite-structure ferroelectrics for future electronic device applications;Kim;Phys Status Solidi RRL,2021

4. Many routes to ferroelectric HfO2: a review of current deposition methods;Hsain;J Vac Sci Technol A,2022

5. A comparative study on the ferroelectric performances in atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) and tetrakis(dimethylamino) precursors;Kim;Nanoscale Res Lett,2020

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