Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1134/S1063739723700476.pdf
Reference33 articles.
1. Atomic Layer Deposition of Nanostructured Materials, Pinna, N. and Knez, M., Eds., Wiley, 2012. https://doi.org/10.1002/9783527639915
2. Uenuma, M., Takahashi, K., Sonehara, S., Tominaga, Yu., Fujimoto, Yu., Ishikawa, Ya., and Uraoka, Yu., Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics, AIP Adv., 2018, vol. 8, no. 10, p. 105103. https://doi.org/10.1063/1.5041501
3. Kinnunen, S., Arstila, K., and Sajavaara, T., Al2O3 ALD films grown using rare isotope 2H2 16O and 1H2 18O precursors, Appl. Surf. Sci., 2021, vol. 546, p. 148909. https://doi.org/10.1016/j.apsusc.2020.148909
4. Vihervaara, A., Hatanpää, T., Mizohata, K., Chundak, M., Popov, G., and Ritala, M., A low-temperature thermal ALD process for nickel utilizing dichlorobis(triethylphosphine)nickel(ii) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine, Dalton Trans., 2022, vol. 51, no. 29, pp. 10898–10908. https://doi.org/10.1039/d2dt01347a
5. Chung, H.K., Won, S.O., Park, Yo., Kim, J.-S., Park, T.J., and Kim, S.K., Atomic-layer deposition of TiO2 thin films with a thermally stable (CpMe5)Ti(OMe)3 precursor, Appl. Surf. Sci., 2021, vol. 550, p. 149381. https://doi.org/10.1016/j.apsusc.2021.149381
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