Influence of carbon impurities and oxygen vacancies in Al2O3 film on Al2O3/GaN MOS capacitor characteristics
Author:
Affiliation:
1. NAIST, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
2. Nippon Aluminum Alkyls Ltd., 1-5 Takasago, Takaishi, Osaka 592-0001, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/1.5041501
Reference18 articles.
1. Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors
2. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition
3. Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics
4. Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
5. Insulated gate and surface passivation structures for GaN-based power transistors
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