Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition

Published:2015-06-02 Issue:23 Volume:7 Page:12774-12780
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhernokletov Dmitry M.¹,Negara Muhammad A.¹,Long Rathnait D.¹,Aloni Shaul²,Nordlund Dennis³,McIntyre Paul C.¹

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

2. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. SSRL, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

Funder

Office of Naval Research

Semiconductor Research Corporation

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b01600

Reference42 articles.

1. ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors

2. High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

3. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

4. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

5. Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

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2. Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering;Applied Physics Reviews;2024-05-31

3. Surface Charge: An Advantage for the Piezoelectric Properties of GaN Nanowires;Nanoenergy Advances;2024-04-02

4. Bridging the gap between surface physics and photonics;Reports on Progress in Physics;2024-03-06

5. Investigation of atomic layer deposition methods of Al2O3 on n-GaN;Journal of Applied Physics;2024-02-22

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