ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors-Reference-Cited by-同舟云学术

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ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors

Published:2006 Issue:2 Volume:24 Page:575
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Dora Yuvaraj,Han Sooyeon,Klenov Dmitri,Hansen Peter J.,No Kwang-soo,Mishra Umesh K.,Stemmer Susanne,Speck James S.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Characteristics of H-Diamond Transistors With ZrO₂/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation;IEEE Transactions on Electron Devices;2024-03

2. Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage;Applied Physics Letters;2023-11-06

3. Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric;Physica Scripta;2022-12-01

4. Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga₂O₃ Schottky diodes;APL Materials;2022-11-01

5. Performance improvement in NiO _x -based GaN MOS-HEMTs;Semiconductor Science and Technology;2022-06-21

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