Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD
Author:
Affiliation:
1. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
2. Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
Funder
II-VI Foundation
Material Characterization Facility at Carnegie Mellon University
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0073517
Reference47 articles.
1. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
2. β-Ga2O3 for wide-bandgap electronics and optoelectronics
3. Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition
4. Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
5. Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
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