Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption-Reference-Cited by-同舟云学术

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Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption

Published:2024-08 Issue: Volume:51 Page:104642
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Dittrich Th.,Parisini A.^ORCID,Pavesi M.^ORCID,Baraldi A.^ORCID,Sacchi A.,Mezzadri F.,Mazzolini P.^ORCID,Bosi M.,Seravalli L.^ORCID,Bosio A.^ORCID,Fornari R.^ORCID

Funder

University of Parma

European Union

Publisher

Elsevier BV

Reference37 articles.

1. Gallium Oxide - Technology: technology; devices and applications. Edited by S. Pearton, F. Ren, M. Mastro, 2019. Metal Oxides Series - Series Editor Ghenadii Korotcenkov.

2. Gallium oxide: materials properties; crystal growth; and devices,2020

3. Recent advances in the growth of gallium oxide thin films employing various growth techniques - a review;Tak;J. Phys. D: Appl. Phys.,2021

4. Thermal stability of ε-Ga2O3 polymorph;Fornari;Acta Mater,2017

5. Crystal structure and ferroelectric properties of ε‑Ga2O3 films grown on (0001)-Sapphire;Mezzadri;Inorg. Chem.,2016

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