Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
Author:
Affiliation:
1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China
2. School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4950867
Reference31 articles.
1. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer
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3. Performance of a 4H-SiC Schottky diode as a compact sized detector for neutron pulse form measurements
4. Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers
5. A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
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