Density-dependent electron transport and precise modeling of GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Published:2015-10-12 Issue:15 Volume:107 Page:153504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bajaj Sanyam¹,Shoron Omor F.¹,Park Pil Sung¹,Krishnamoorthy Sriram¹,Akyol Fatih¹,Hung Ting-Hsiang¹,Reza Shahed²,Chumbes Eduardo M.²,Khurgin Jacob³,Rajan Siddharth¹⁴

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Raytheon Integrated Defense Systems, Andover, Massachusetts 01810, USA

3. Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA

4. Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

Raytheon Integrated Defense Systems

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4933181

Reference21 articles.

1. 40-W/mm Double Field-plated GaN HEMTs

2. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

3. Self-aligned-gate GaN-HEMTs with heavily-doped n⁺-GaN ohmic contacts to 2DEG

4. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

5. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

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