A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4933257
Reference24 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
3. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
4. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
5. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
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