Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Author:

Damilano B.1ORCID,Aristégui R.2ORCID,Teisseyre H.134ORCID,Vézian S.1ORCID,Guigoz V.1ORCID,Courville A.1,Florea I.1ORCID,Vennéguès P.1ORCID,Bockowski M.4ORCID,Guillet T.2ORCID,Vladimirova M.2ORCID

Affiliation:

1. Université Côte d’Azur, CNRS, CRHEA 1 , Valbonne, France

2. Laboratoire Charles Coulomb (L2C), University of Montpellier, CNRS 2 , Montpellier, France

3. Polish Academy of Sciences, Institute of Physics 3 , Warsaw, Poland

4. Polish Academy of Sciences, Institute of High-Pressure Physics 4 , Warsaw, Poland

Abstract

GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6–8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900 °C) on the surface morphology, structural, and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of micrometers was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1−xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids.

Funder

Agence Nationale de la Recherche

Région Occitanie Pyrénées-Méditerranée

Publisher

AIP Publishing

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