Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers-Reference-Cited by-同舟云学术

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

Author:

Yang J.¹²^ORCID,Wang B. B.¹^ORCID,Zhao D. G.¹²^ORCID,Liu Z. S.¹^ORCID,Liang F.¹^ORCID,Chen P.¹,Zhang Y. H.¹^ORCID,Zhang Z. Z.¹

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Key Research and Development Program of China

National Natural science foundation of China

Youth Innovation Association of Chinese Academy of Science

Beijing Nova Program

Strategic Priority Research Program of Chinese Academy of Sciences

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference18 articles.

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4. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01