Reduction in threshold current density of 355 nm UV laser diodes-Reference-Cited by-同舟云学术

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Reduction in threshold current density of 355 nm UV laser diodes

Published:2011-03-28 Issue:5 Volume:8 Page:1564-1568
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Nagata Kengo,Takeda Kenichiro,Nonaka Kentaro,Ichikawa Tomoki,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Amano Hiroshi,Yoshida Harumasa,Kuwabara Masakazu,Yamashita Yoji,Kan Hirofumi

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01

2. Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells;Journal of Physics D: Applied Physics;2023-10-26

3. Regulating absorption loss and carrier injection efficiency in ultraviolet laser diodes by changing waveguide layer structure;Optics & Laser Technology;2022-12

4. Recent development of UV-B laser diodes;Japanese Journal of Applied Physics;2021-11-22

5. Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers;Journal of Applied Physics;2021-11-07

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