Regulating absorption loss and carrier injection efficiency in ultraviolet laser diodes by changing waveguide layer structure-Reference-Cited by-同舟云学术

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Regulating absorption loss and carrier injection efficiency in ultraviolet laser diodes by changing waveguide layer structure

Published:2022-12 Issue: Volume:156 Page:108574
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Yang J.^ORCID,Zhao D.G.,Liu Z.S.,Liang F.^ORCID,Chen P.,Wang B.B.,Zhang Y.H.,Zhang Z.Z.

Funder

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Beijing Nova Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

2. Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode

3. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes

4. Research status and prospects of deep ultraviolet devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of Watt Level 375 nm Short Cavity Laser Diode With Etched Facets;IEEE Photonics Technology Letters;2024-06-01

2. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01

3. InGaN surface morphology evolution investigated by atomic force microscope with power spectral density analysis;Journal of Crystal Growth;2023-06

4. Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure;Optics Express;2023-02-16

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