Demonstration of Watt Level 375 nm Short Cavity Laser Diode With Etched Facets-Reference-Cited by-同舟云学术

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Demonstration of Watt Level 375 nm Short Cavity Laser Diode With Etched Facets

Published:2024-06-01 Issue:11 Volume:36 Page:741-744
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Lin Qinchen¹^ORCID,Wang Guangying¹^ORCID,Liu Cheng¹,Sanyal Surjava¹,Mukhopadhyay Swarnav¹,Dwyer Matthew²,Seitz Matthew³^ORCID,Earles Tom²,Tansu Nelson⁴,Zhang Jing³^ORCID,Mawst Luke¹^ORCID,Pasayat Shubhra S.¹^ORCID,Gupta Chirag¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA

2. DRS Daylight Solutions, Madison, WI, USA

3. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA

4. School of Electrical and Mechanical Engineering, The University of Adelaide, Adelaide, SA, Australia

Funder

DRS Daylight Solutions

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/68/10509769/10518051.pdf?arnumber=10518051

Reference21 articles.

1. Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure

2. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

3. The 2020 UV emitter roadmap

4. Regulating absorption loss and carrier injection efficiency in ultraviolet laser diodes by changing waveguide layer structure

5. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes

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