Evaluating the performance of an AlGaN based deep ultraviolet laser diode using graded waveguide layer and graded cladding layer

Abstract

Abstract To improve the output power and reduce electron leakage of a deep ultraviolet laser diode and optimize its performance,in this paper, the graded waveguide layer was first applied to a traditional AlGaN based deep ultraviolet laser diode, and four different combinations of the waveguide layer structure were simulated. Then a graded cladding layer structure with reduced thickness was added. Finally, the carrier concentration, energy band diagram, P-I curve, and optical confinement factor were numerically analysed and studied. The results demonstrate that, by using an Al-graded waveguide layer/p-cladding layer structure, the optical confinement factor of a laser diode with an emission wavelength of 267 nm, was 29.34%, and the maximum power was 89.81 mW at 100 mA current.