Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3567786
Reference10 articles.
1. Deep-Ultraviolet Light-Emitting Diodes
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
5. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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