222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire-Reference-Cited by-同舟云学术

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

Published:2009-06 Issue:6 Volume:206 Page:1176-1182
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi (a)

Author:

Hirayama Hideki,Fujikawa Sachie,Noguchi Norimichi,Norimatsu Jun,Takano Takayoshi,Tsubaki Kenji,Kamata Norihiko

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

2. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers

3. AlGaN/GaN quantum well ultraviolet light emitting diodes

4. Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice

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