350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN-Reference-Cited by-同舟云学术

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Published:2004-03-19 Issue:No. 4A Volume:43 Page:L499-L500
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iida Kazuyoshi,Kawashima Takeshi,Miyazaki Atsushi,Kasugai Hideki,Mishima Syunsuke,Honshio Akira,Miyake Yasuto,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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