Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1338964
Reference6 articles.
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4. Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
5. Localized Donors in Gan: Spectroscopy Using Large Pressures
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