Advances in group III-nitride-based deep UV light-emitting diode technology-Reference-Cited by-同舟云学术

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Advances in group III-nitride-based deep UV light-emitting diode technology

Published:2010-12-15 Issue:1 Volume:26 Page:014036
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kneissl M,Kolbe T,Chua C,Kueller V,Lobo N,Stellmach J,Knauer A,Rodriguez H,Einfeldt S,Yang Z,Johnson N M,Weyers M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Ultraviolet light-emitting diodes in water disinfection

2. GaN-free transparent ultraviolet light-emitting diodes

3. High efficiency GaN-based LEDs and lasers on SiC

Cited by 629 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of non-polar AlN films by ICP etching and overgrowth by MBE;Journal of Crystal Growth;2024-11

2. UV-A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires;ACS Applied Materials & Interfaces;2024-09-11

3. Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2024-09-09

4. High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes;IEEE Photonics Technology Letters;2024-08-15

5. Structural and optical characterizations of cubic GaN layers grown by MOVPE on GaAs(114) substrate;Optical Materials;2024-08

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