Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes-Reference-Cited by-同舟云学术

Composition-graded quantum barriers improve performance in AlGaN-based deep ultraviolet laser diodes

Published:2022-07-01 Issue:07 Volume:61 Page:
ISSN:0091-3286
Container-title:Optical Engineering
language:
Short-container-title:Opt. Eng.

Author:

Zhang Pengfei¹,Jia Liya¹,Zhang Aoxiang¹,Sharif Muhammad Nawaz¹,Wang Fang¹,Liou Juin J.¹,Liu Yuhuai¹

Affiliation:

1. Zhengzhou University, School of Electrical and Information Engineering, National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, Zhengz

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference36 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

3. The 2020 UV emitter roadmap

4. External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs

5. Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

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1. Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques;Physica Scripta;2024-01-12

2. Effect of AlGaN quantum barrier thickness on electron-hole overlapping in deep-ultraviolet laser diode;Optik;2023-09

3. Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

4. Performance enhancement of AlGaN deep-ultraviolet laser diodes with linear variation quantum barriers;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07