Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer-Reference-Cited by-同舟云学术

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Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer

Published:2023-02-07 Issue: Volume: Page:
ISSN:
Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Zhang Chi¹,Xu Yuan¹,Wang Fang¹,Liou Juin. J.¹,Liu Yuhuai¹

Affiliation:

1. Zhengzhou University,National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering,Zhengzhou,China,450001

Funder

Nature

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071002.pdf?arnumber=10071002

Reference25 articles.

1. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

2. Suppressing the efficiency droop in the AlGaN-based UVB LED;muhammad;Nanotechnology,2021

3. Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

4. Influence of Stark Effect and Quantum Wells Thickness on Optical Properties of InGaN Laser Diodes

5. Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

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