Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers-Reference-Cited by-同舟云学术

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Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

Published:2008-12-12 Issue:1 Volume:95 Page:145-153
ISSN:0946-2171
Container-title:Applied Physics B
language:en
Short-container-title:Appl. Phys. B

Author:

Chen J.-R.,Ling S.-C.,Huang H.-M.,Su P.-Y.,Ko T.-S.,Lu T.-C.,Kuo H.-C.,Kuo Y.-K.,Wang S.-C.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://link.springer.com/content/pdf/10.1007/s00340-008-3331-9.pdf

Reference45 articles.

1. E.F. Schubert, J.K. Kim, Science 308, 1274 (2005)

2. D.A. Steigerwald, J.C. Bhat, D. Collins, R.M. Fletcher, M.O. Holcomb, M.J. Ludowise, P.S. Martin, S.L. Rudaz, IEEE J. Sel. Top. Quantum Electron. 8, 310 (2002)

3. S. Nakamura, G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997)

4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, T. Mukai, Appl. Phys. Lett. 76, 22 (2000)

5. T. Asano, T. Tojyo, T. Mizuno, M. Takeya, S. Ikeda, K. Shibuya, T. Hino, S. Uchida, M. Ikeda, IEEE J. Quantum Electron. 39, 135 (2003)

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