External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs-Reference-Cited by-同舟云学术

External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs

Published:2020-06-06 Issue:7 Volume:2 Page:1892-1907
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Khan M. Ajmal¹²^ORCID,Itokazu Yuri¹,Maeda Noritoshi¹,Jo Masafumi¹,Yamada Yoichi³,Hirayama Hideki¹²

Affiliation:

1. RIKEN Cluster for Pioneering Research (CPR), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

2. RIKEN Center for Advanced Photonics (RAP), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

3. Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

Funder

New Energy and Industrial Technology Development Organization

Nippon Tungsten co., LTD, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00172

Reference56 articles.

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2. Action Spectrum for Phototherapy of Psoriasis

3. Overcoming the current injection issue in the 310 nm band AlGaN UVB light-emitting diode

4. Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs

5. Ultraviolet B Light Emitting Diodes (LEDs) Are More Efficient and Effective in Producing Vitamin D3 in Human Skin Compared to Natural Sunlight

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