Effect of AlGaN quantum barrier thickness on electron-hole overlapping in deep-ultraviolet laser diode
Author:
Funder
Zhengzhou University
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference43 articles.
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5. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells;Li;Appl. Phys. Lett.,2015
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