Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate-Reference-Cited by-同舟云学术

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Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

Published:2007-09-07 Issue:9A Volume:46 Page:5782-5784
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoshida Harumasa,Takagi Yasufumi,Kuwabara Masakazu,Amano Hiroshi,Kan Hirofumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference12 articles.

1. Ultraviolet AlGaN multiple-quantum-well laser diodes

2. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy

3. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

4. High efficiency GaN-based LEDs and lasers on SiC

5. Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures

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1. Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques;Physica Scripta;2024-01-12

2. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01

3. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes;Applied Physics Letters;2023-09-25

4. Effect of AlGaN quantum barrier thickness on electron-hole overlapping in deep-ultraviolet laser diode;Optik;2023-09

5. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness;Journal of Crystal Growth;2023-04

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