Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes-Reference-Cited by-同舟云学术

Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes

Published:2023-09-25 Issue:13 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Ando Yuto¹^ORCID,Xu Zhiyu¹^ORCID,Detchprohm Theeradetch¹^ORCID,Young Preston²^ORCID,Dupuis Russell D.¹^ORCID

Affiliation:

1. Center for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology 1 , 777 Atlantic Drive, Atlanta, Georgia 30332, USA

2. Photodigm Inc 2 ., 1155 E. Collins Blvd., Suite 200, Richardson, Texas 75081, USA

Abstract

The non-planar growth of UV-A laser diode heterostructures composed of AlGaN layers with high Al-mole-fractions and thicknesses exceeding the critical layer thickness was performed on patterned c-plane GaN (0001) substrates with stripe-shaped mesa structures. This approach suppressed the surface cracking at the top of the mesas via an anisotropic relaxation of the in-plane strain along the direction normal to the mesa stripes. Stimulated emission and laser operation at room temperature with emission in the UV-A range under pulsed current injection were demonstrated for laser diodes fabricated on the mesas.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0159684/18137694/132103_1_5.0159684.pdf

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