Hexagonal boron nitride for deep ultraviolet photonic devices
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=8/a=084003/pdf
Reference98 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
3. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
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