Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy-Reference-Cited by-同舟云学术

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Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy

Published:2015-08-28 Issue:8 Volume:118 Page:085301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Oshima Yuichi¹,Víllora Encarnación G.¹,Matsushita Yoshitaka²,Yamamoto Satoshi³,Shimamura Kiyoshi¹

Affiliation:

1. Optical Single Crystals Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Materials Analysis Station, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Optoelectronic Materials Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4929417

Reference25 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

3. Some electrical properties of the semiconductor βGa2O3

4. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

5. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

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