High-quality heteroepitaxy of ε-Ga2O3 films on 4H-SiC substrates grown via MOCVD

Abstract

High-quality ε-Ga2O3 epitaxial layers were grown on a 4H-SiC substrate via MOCVD. A (004) XRC FWHM of the ε-Ga2O3 epitaxial layer as small as 0.09° (341 arcsec) is achieved.