Exploratory phase stabilization in heteroepitaxial gallium oxide films by pulsed laser deposition-Reference-Cited by-同舟云学术

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Exploratory phase stabilization in heteroepitaxial gallium oxide films by pulsed laser deposition

Published:2023-02 Issue: Volume:935 Page:168123
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhang Jianguo,Wang Wei,Wu Simiao,Geng Zhiming,Zhang Jinfu,Chen Li,Liu Ningtao,Yan Xuejun,Zhang Wenrui,Ye Jichun

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. State-of-the-art technologies of gallium oxide power devices;Higashiwaki;J. Phys. D: Appl. Phys.,2017

2. Review of Ga2O3-based optoelectronic devices;Guo;Mater. Today Phys.,2019

3. Tin-Assisted synthesis of ε-Ga2O3 by molecular beam epitaxy;Kracht;Phys. Rev. Appl.,2017

4. Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique;Goyal;J. Alloy. Compd.,2014

5. Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition;Zhang;J. Cryst. Growth,2014

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1. Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model;Applied Surface Science;2024-10

2. Impact of temperature and film thickness on α- and β- phase formation in Ga2O3 thin films grown on a-plane sapphire substrate;Thin Solid Films;2024-08

3. Epitaxial Tantalum‐Doped β‐Ga₂O₃ Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition;physica status solidi (RRL) – Rapid Research Letters;2024-03-08

4. High-quality heteroepitaxy of ε-Ga₂O₃ films on 4H-SiC substrates grown via MOCVD;CrystEngComm;2024

5. Modulation Of Electronic Structures and Transport Properties In 2d Tm0.5ga1.5o3 (Tm = Al, Ga, in);2024

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