Control of Schottky barrier height in metal/β-Ga2O3 junctions by insertion of PdCoO2 layers
Author:
Affiliation:
1. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
2. Center for Spintronics Research Network (CSRN), Tohoku University, Sendai 980-8577, Japan
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5145117
Reference35 articles.
1. Fundamentals of Power Semiconductor Devices
2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
3. Recent progress in Ga2O3power devices
4. β-Ga2O3-based metal–oxide–semiconductor photodiodes with HfO2 as oxide
5. Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition
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