Transparent p-n heterojunction thin film diodes based on p-CuCrO2 and n-In2O3

Author:

Cheng Wangping,He YuandiORCID,Wei RenhuaiORCID,Hu LingORCID,Song WenhaiORCID,Zhu Xuebin,Sun Yuping

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p–n heterojunction diodes;Narushima;Adv. Mater.,2003

2. Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes;Schein;Appl. Phys. Lett.,2014

3. Effect of annealing temperature on radio frequency sputtered p-type delafossite copper chromium oxide (CuCrO2) thin films and investigation of diode characteristics forming transparent pn-heterojunction;Sundaresh;Coatings,2023

4. High sensitive and stable self-powered solar-blind photodetector based on solution-processed all inorganic CuMO2/Ga2O3 pn heterojunction;Wu;Mater. Today Phys.,2021

5. Transparent p-type AlN:SnO2 and p-AlN:SnO2/n-SnO2:In2O3 p-n junction fabrication;Liu;Appl. Phys. Lett,2012

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