Photosensitive and Rectifying Properties of Ga<sub>2</sub>O<sub>3</sub> Described by Polaronic Screened Electrons and Internal Potentials-Reference-Cited by-同舟云学术

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Photosensitive and Rectifying Properties of Ga₂O₃ Described by Polaronic Screened Electrons and Internal Potentials

Published:2023-11-15 Issue:47 Volume:127 Page:23077-23089
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Schmeißer Dieter¹^ORCID,Müller Klaus¹,Henkel Karsten¹^ORCID

Affiliation:

1. Institute of Physics, BTU Cottbus-Senftenberg, Postfach 101344, D-03013 Cottbus, Germany

Funder

Bundesministerium f?r Wirtschaft und Technologie

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c05785

Reference66 articles.

1. On the bulk β-Ga2O3 single crystals grown by the Czochralski method

2. β-Ga2O3 for wide-bandgap electronics and optoelectronics

3. Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

4. Growth of bulk β-Ga₂O₃ single crystals by the Czochralski method

5. A review of Ga2O3materials, processing, and devices

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