On the bulk β-Ga2O3 single crystals grown by the Czochralski method-Reference-Cited by-同舟云学术

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Published:2014-10 Issue: Volume:404 Page:184-191
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Galazka Zbigniew,Irmscher Klaus,Uecker Reinhard,Bertram Rainer,Pietsch Mike,Kwasniewski Albert,Naumann Martin,Schulz Tobias,Schewski Robert,Klimm Detlef,Bickermann Matthias

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

2. Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer

3. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

4. Growth and characteristics of optical single crystals for UV/VUV applications

5. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

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