Non-damaging growth and band alignment of p-type NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction diodes for high power applications-Reference-Cited by-同舟云学术

Non-damaging growth and band alignment of p-type NiO/β-Ga₂O₃ heterojunction diodes for high power applications

Published:2024 Issue:29 Volume:12 Page:11020-11032
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Min Ji Young¹²,Labed Madani¹²,Prasad Chowdam Venkata¹²,Hong Jung Yeop³,Jung Young-Kyun³,Rim You Seung¹²^ORCID

Affiliation:

1. Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Republic of Korea

2. Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea

3. Energy Devices Research Team, Research and Development Division, Hyundai Motor Group, Gyeonggi-do 16082, Republic of Korea

Abstract

We developed NiO/β-Ga2O3 heterojunction power devices with a breakdown voltage of −644 V, a low leakage current of about 1 × 10−6 (A cm−2) at −600 V and an on-resistance of 10.85 mΩ cm2 with high thermal stability with the operation temperature higher than 130 °C.

Funder

Hyundai Motor Group

Korea Institute for Advancement of Technology

Korea Evaluation Institute of Industrial Technology

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04268E

Reference93 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. A review of Ga2O3materials, processing, and devices

3. Guest Editorial: The dawn of gallium oxide microelectronics

4. A review of the most recent progresses of state-of-art gallium oxide power devices

5. Band Gap Engineering in β-Ga2O3 for a High-Performance X-ray Detector