Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

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Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors

Published:2011-03-21 Issue:12 Volume:98 Page:123509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Hau-Yu,Wu San-Lein,Cheng Chao-Ching,Ko Chih-Hsin,Wann Clement H.,Lin You-Ru,Chang Shoou-Jinn,Wu Tai-Bor

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3571293

Reference24 articles.

1. MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations

2. Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

3. 1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

4. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

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1. Nucleation dependence of atomic layer deposition on diamond surface termination;Carbon;2023-09

2. Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs;Journal of Nanoelectronics and Optoelectronics;2018-04-01

3. Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics;Scientific Reports;2017-09-06

4. ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment;Applied Physics Letters;2016-03-28

5. Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions;Nano Letters;2016-03-21

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